Share Email Print
cover

Proceedings Paper

Laser-Assisted Dry Etching Of Semiconducting Materials
Author(s): P Brewer; W Holber; G Reksten; R M Osgood
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The use of laser assisted chemistry for dry etching of semiconductors is described. Both direct laser-driven etching of GaAs and laser-enhanced plasma etching of Si are given as examples.

Paper Details

Date Published: 14 June 1984
PDF: 4 pages
Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939447
Show Author Affiliations
P Brewer, Columbia University (United States)
W Holber, Columbia University (United States)
G Reksten, Columbia University (United States)
R M Osgood, Columbia University (United States)


Published in SPIE Proceedings Vol. 0459:
Laser-Assisted Deposition, Etching, and Doping
Susan Davis Allen, Editor(s)

© SPIE. Terms of Use
Back to Top