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Proceedings Paper

UV Laser-Induced Radical-Etching For Microelectronic Processing
Author(s): G L Loper; M D Tabat
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Paper Abstract

This paper reports work towards the development of new UV laser-induced radical-etching processes for the efficient and selective removal of: (1) polycrystalline (poly)-silicon layers deposited on silicon dioxide substrates, (2) tungsten layers deposited on either silicon or silicon dioxide substrates, and (3) silicon dioxide layers deposited on either silicon or aluminum substrates.

Paper Details

Date Published: 14 June 1984
PDF: 7 pages
Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939446
Show Author Affiliations
G L Loper, The Aerospace Corporation (United States)
M D Tabat, The Aerospace Corporation (United States)

Published in SPIE Proceedings Vol. 0459:
Laser-Assisted Deposition, Etching, and Doping
Susan Davis Allen, Editor(s)

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