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Proceedings Paper

Nascent Product Time-Of-Flight Distributions From Laser Initiated Etching Of Germanium By Bromine
Author(s): Glenn P Davis; Cameron A Moore; Richard A. Gottscho
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Paper Abstract

The dynamics of laser stimulated etching of Ge by Br2 have been studied by characterization of the desorbed products. The product time-of-flight distribution was measured with a quadrupole mass spectrometer, providing both product identification and velocity analysis. Transient reflectivity measurements were used to determine when the melt threshold for Ge was exceeded. At low Br2 pressure, etching at a rate of - 0.1 - 0.2Å per pulse was observed above the melt threshold. The principal product observed was GeBr2, whose translational energy distribution deviated slightly from Maxwell-Boltzmann: the observed distribution was relatively rich in high energy species (i.e. hyperthermal).

Paper Details

Date Published: 14 June 1984
PDF: 6 pages
Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939445
Show Author Affiliations
Glenn P Davis, Bell Laboratories (United States)
Cameron A Moore, Bell Laboratories (United States)
Richard A. Gottscho, Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0459:
Laser-Assisted Deposition, Etching, and Doping
Susan Davis Allen, Editor(s)

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