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Proceedings Paper

Photochemical CVD For VLSI Fabrication
Author(s): R C Rossi; K K Schuegraf
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Paper Abstract

A photochemical process is described that has potential for the manufacture of very large scale integrated circuits. A prototype reactor is described and the results of experimentation are presented and discussed. The deposition of a Si02 thin film by the photochemical reaction of silane and nitrous oxide was found to be a surface reaction but the data has not differentiated between a desorption or adsorption process. The reaction is photosensitized with mercury and it is shown that at high mercury concentrations, a mercurous oxide forms. Modifications to the prototype reactor are presented showing the excellent thickness uniformity possible. Criteria for VLSI manufacture by photochemistry is also presented.

Paper Details

Date Published: 14 June 1984
PDF: 4 pages
Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939441
Show Author Affiliations
R C Rossi, Tylan Corporation (United States)
K K Schuegraf, Tylan Corporation (United States)

Published in SPIE Proceedings Vol. 0459:
Laser-Assisted Deposition, Etching, and Doping
Susan Davis Allen, Editor(s)

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