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Proceedings Paper

A-S:H Films Produced From Laser Heated Gases: Process Characteristics And Film Properties
Author(s): J H. Flint; M. Meunier; D Adler; J S Haggerty
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Paper Abstract

A process for depositing a-Si:H films from CO2 laser-heated gases has been demonstrated and modelled, the properties of resulting films have been investigated extensively. Film growth rate is determined by the peak gas temperature, defined by an energy balance between the absorption of the laser beam and thermal conduction to the substrate and the cell walls. The hydrogen content and neutral spin density follow an equilibrium function of the substrate temperature. The optical and electronic properties also depend on the substrate temperature.

Paper Details

Date Published: 14 June 1984
PDF: 5 pages
Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939437
Show Author Affiliations
J H. Flint, Massachusetts Institute of Technology (United States)
M. Meunier, Massachusetts Institute of Technology (United States)
D Adler, Massachusetts Institute of Technology (United States)
J S Haggerty, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0459:
Laser-Assisted Deposition, Etching, and Doping
Susan Davis Allen, Editor(s)

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