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Proceedings Paper

Large Area Deposition Of Hydrogenated Amorphous Silicon By CW CO[sub]2 [/sub]Lasers
Author(s): R Bilenchi; M. Musci; R Murri
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Paper Abstract

In order to enhance the deposited area and to improve the uniformity of hydrogenated amor phous silicon (a-Si:H) films, obtained from photodissociation of silane molecules by CO2 laser radiation, two new different experimental approaches are investigated. One of these utilizes a high power (≈ 1 KW) CW CO2 laser with uniform intensity distribution in a rectangular beam cross section; the other consists in a continuous scanning, along a horizontal plane parallel to the substrate, of a low power (≈ 100 W) gaussian laser beam. Preliminary results about p and n doping of the photodeposited material by boron and pho-sphorous ion implantation proved its high doping efficiency and its structural similarity to the chemical vapor deposition produced material.

Paper Details

Date Published: 14 June 1984
PDF: 5 pages
Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939436
Show Author Affiliations
R Bilenchi, Universita di Bari (Italy)
M. Musci, Universita di Bari (Italy)
R Murri, Universita di Bari (Italy)


Published in SPIE Proceedings Vol. 0459:
Laser-Assisted Deposition, Etching, and Doping
Susan Davis Allen, Editor(s)

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