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Proceedings Paper

Laser Photolysis And Ionization Of Polyatomic Molecules: Film Growth And Spectroscopic Diagnostics
Author(s): J G Eden; J. F Osmundsen; C C Abele; D B Geohegan
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Paper Abstract

Experiments are described in which semiconductor or metal films are grown from the vapor phase by photodissociating or photoionizing diatomic or polyatomic molecules. The photolysis of GeH4 at 248 nm Mw = 5 eV) is initiated by a two photon process that liberates the germylene radical GeH2. Spatially and temporally-resolved concentration profiles for several excited states of GeH and atomic Ge have been measured near the substrate. Thin indium films have been deposited on nickel substrates by dissociatively ionizing indium monoiodide (InI) to produce In+ - I- ion pairs. The dynamics of ion pair production for thallium iodide or InI vapor photoexcited at 193 nm have been studied by combining an excimer laser with microwave absorption techniques.

Paper Details

Date Published: 14 June 1984
PDF: 3 pages
Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939430
Show Author Affiliations
J G Eden, University of Illinois (United States)
J. F Osmundsen, University of Illinois (United States)
C C Abele, University of Illinois (United States)
D B Geohegan, University of Illinois (United States)


Published in SPIE Proceedings Vol. 0459:
Laser-Assisted Deposition, Etching, and Doping
Susan Davis Allen, Editor(s)

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