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Proceedings Paper

Thin Film Deposition By UV Laser Photolysis
Author(s): K. Emery; P K Boyer; L R. Thompson; R. Solanki; H Zarnani; G. J Collins
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Paper Abstract

An ArF excimer laser was used to photochemically deposit thin films of silicon dioxide, silicon nitride, aluminum oxide and zinc oxide at low temperatures (100-500°C) for microelectronic applications. High depo-sition (>1000 A/Min) rates and conformal step coverage were obtained. The hydrogen bonding, pinhole density, index of refraction, etch rate, and breakdown voltage have been measured for the Si02 and silicon nitride films. The effect of substrate temperature and ArF (193 nm) surface photons on the physical, chemical and electrical properties of Si02 films have been investigated.

Paper Details

Date Published: 14 June 1984
PDF: 9 pages
Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939428
Show Author Affiliations
K. Emery, Colorado State University (United States)
P K Boyer, Colorado State University (United States)
L R. Thompson, Colorado State University (United States)
R. Solanki, Colorado State University (United States)
H Zarnani, Colorado State University (United States)
G. J Collins, Colorado State University (United States)

Published in SPIE Proceedings Vol. 0459:
Laser-Assisted Deposition, Etching, and Doping
Susan Davis Allen, Editor(s)

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