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Proceedings Paper

Rutherford Scattering-Channeling Analysis Of Semiconductor Structures
Author(s): L. C. Feldman
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Paper Abstract

The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited. High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. This brief review has been published in a similar form for the Materials Research Society Symposium on Interfaces and Contacts, 1982.

Paper Details

Date Published: 10 May 1984
PDF: 3 pages
Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939305
Show Author Affiliations
L. C. Feldman, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0452:
Spectroscopic Characterization Techniques for Semiconductor Technology I
Robert S. Bauer; Fred H. Pollak, Editor(s)

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