Share Email Print

Proceedings Paper

Measurement And Interpretation Of Optical Properties At High Temperatures
Author(s): Dan Goldschmidt
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The use of the pseudo-Brewster and other reflection-transmissicn techniques in the characterization and interpretation of high temperature optical properties has been reported. In the pseudo-Brewster method one measures the ratio between the parallel and perpendicular to plane of incidence reflectance intensities at its minimum value, and the angle of incidence at that minimum to determine the optical coefficients n and κ. At high temperatures, where a surface oxide may build up during the measurement, operation under non-oxidizing conditions was required. A vacuum reflectometer, capable of operation at 500°C, is described. The variation in thickness of the surface oxide is small enough so as to be ignored in the pseudo-Brewster analysis, but would have introduced a larger error if an ellipsometric technique was employed. Results for n and κ of single crystal and amorphous germanium at temperatures up to 400°C are discussed in terms of the corresponding room temperature spectra. Extension of this point-by-point technique to a large spectral range has been suggested recently and is described. Conventional thin film transmission and reflection measurements have been utilized as complementary techniques to determine respectively the absorption edge and the subgap dispersion in the refractive index at high temperatures. The former results join smoothly with the pseudo-Brewster results. The temperature dependence of the refractive index dispersion and of the absorption edge, which are related by the Kramers-Kronig integrals, were compared via calculation of the moments of ε2, yielding good agreement between both kinds of measurements.

Paper Details

Date Published: 10 May 1984
PDF: 10 pages
Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939295
Show Author Affiliations
Dan Goldschmidt, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0452:
Spectroscopic Characterization Techniques for Semiconductor Technology I
Robert S. Bauer; Fred H. Pollak, Editor(s)

© SPIE. Terms of Use
Back to Top