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Proceedings Paper

Determination Of Indirect Conduction Band Minima In Semiconductors By Core-Level Reflectance Spectroscopy
Author(s): S. M. Kelso; D. E. Aspnes; C. G. Olson; D. W. Lynch; K. J. Bachmann
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Paper Abstract

We have studied transitions from shallow core levels to lower conduction band states in In1-xGaxAsyP1-y, In1-xGaxAs, and In1-xGaxSb using synchrotron radiation reflectance spectroscopy in the 17.5-21.5 eV photon energy range. Fits of third derivative lineshapes yield core-conduction energies modified by excitonic effects. The nonlinear variation of these energies is mostly determined by the L and X conduction band edges. From our data we obtain the following bowing parameters: CL = 0.10 ± 0.05 eV, Cx = 0.21 ± 0.07 eV for In1-xGaxAsyP1-y; CL = 0.4-0.7 eV, Cx = 0.08 ± 0.05 eV for In1-xGaxAs; and CL = 0.33 ± 0.05 eV, Cx = 0.13 ± 0.06 eV for In1-xGaxSb.

Paper Details

Date Published: 10 May 1984
PDF: 10 pages
Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939294
Show Author Affiliations
S. M. Kelso, Xerox Palo Alto Research Center (United States)
D. E. Aspnes, Bell Laboratories (United States)
C. G. Olson, Iowa State University (United States)
D. W. Lynch, Iowa State University (United States)
K. J. Bachmann, North Carolina State University (United States)

Published in SPIE Proceedings Vol. 0452:
Spectroscopic Characterization Techniques for Semiconductor Technology I
Robert S. Bauer; Fred H. Pollak, Editor(s)

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