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Proceedings Paper

Characterization Of Semiconductor Silicon Using FT-IR Spectroscopy.
Author(s): K. Krishnan; R. B. Mundhe
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Paper Abstract

A number of properties of semiconductor silicon during the various stages of the device manufacturing can be measured by Fourier transform infrared spectroscopy. In this paper, the accurate determination of the interstitial oxygen concentrations including the corrections for the effect of multiple reflections in the silicon wafer will be described. Microscopic mapping of the oxygen distribution from sampling areas of 25 micrometers or less in diameter will also be described. Methods are also outlined for the accurate determination of the phosphorus and boron concentrations in phosphosilicate, borosilicate, and borophosphosilicate glasses on silicon.

Paper Details

Date Published: 10 May 1984
PDF: 8 pages
Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939291
Show Author Affiliations
K. Krishnan, Bio-Rad Semiconductor Measurement Systems (United States)
R. B. Mundhe, Bio-Rad Semiconductor Measurement Systems (United States)


Published in SPIE Proceedings Vol. 0452:
Spectroscopic Characterization Techniques for Semiconductor Technology I
Robert S. Bauer; Fred H. Pollak, Editor(s)

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