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Proceedings Paper

Raman Study Of Strain And Microadhesion In Silicon
Author(s): J. Gonzalez-Hernandez; Denis Martin; Raphael Tsu
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Paper Abstract

By measuring the Raman frequency shift due to a two-dimensional stress induced in silicon thin films in various substrates having thermal expansion coefficients above and below that of silicon, we have characterize the strength of bond between the silicon film and the substrate. Therefore our approach offers a quantitative measure of microadhesion.

Paper Details

Date Published: 10 May 1984
PDF: 7 pages
Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939288
Show Author Affiliations
J. Gonzalez-Hernandez, Energy Conversion Devices, Inc. (United States)
Denis Martin, Energy Conversion Devices, Inc. (United States)
Raphael Tsu, Energy Conversion Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 0452:
Spectroscopic Characterization Techniques for Semiconductor Technology I
Robert S. Bauer; Fred H. Pollak, Editor(s)

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