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Proceedings Paper

Raman Characterization Of Semiconductors Revisited
Author(s): Fred H. Pollak; Raphael Tsu
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Paper Abstract

We review a number of recent significant developments in the use of Raman scattering (first-order as well as second-order) to characterize semiconductors in bulk, thin film or device form. Areas to be discussed include microcrystalline and amorphous tetrahedrally bonded solids (particularly Si), ion-damage and laser-annealing effects, microscopic nature of potential fluctuations in alloy semiconductors (including single crystal metastable materials), determination of the composition dependence of conduction band effective mass and scattering times, HgCdTe and CdTe, zone-folding in superlattices, correlation of light scattering and transport properties in quantum well structures, interfaces (including semiconductor/vacuum, Schottky barriers, MOS, heterojunctions) and determination of strains (including temperature dependence) at the interface of Si on various substrates.

Paper Details

Date Published: 10 May 1984
PDF: 18 pages
Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939287
Show Author Affiliations
Fred H. Pollak, Brooklyn College of CUNY (United States)
Raphael Tsu, Energy Conversion Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 0452:
Spectroscopic Characterization Techniques for Semiconductor Technology I
Robert S. Bauer; Fred H. Pollak, Editor(s)

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