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Proceedings Paper

Electron Beam Pattern Writer For X-Ray Masks
Author(s): R Viswanathan; A D. Wilson; J Lafuente; H Voelker; A Kern
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Paper Abstract

This paper discusses the capabilities of a vector scan electron-beam system as an X-ray mask writer for pattern geometries at and below one-half micron. The noise level in the deflection system has been reduced to an RMS value of 150 A over a 0.5 mm deflection field, thus making our exposure system usable in the one-quarter micron regime. Pattern geometries below 2000 A have been fabricated on a thin membrane. Drift compensation techniques, implemented in software, have reduced placement errors over the entire mask to less than 700 A. Accomplishments in the areas of noise reduction, bandwidth error compensation, system resolution, and improvements in pattern placement accuracy are discussed.

Paper Details

Date Published: 19 March 1984
PDF: 9 pages
Proc. SPIE 0448, X-Ray Lithography and Applications of Soft X-Rays to Technology, (19 March 1984); doi: 10.1117/12.939216
Show Author Affiliations
R Viswanathan, IBM T.J.Watson Research Center (United States)
A D. Wilson, IBM T. J. Watson Research Center (United States)
J Lafuente, IBM T. J. Watson Research Center (United States)
H Voelker, IBM T. J. Watson Research Center (United States)
A Kern, IBM T. J. Watson Research Center (United States)


Published in SPIE Proceedings Vol. 0448:
X-Ray Lithography and Applications of Soft X-Rays to Technology
Alan D. Wilson, Editor(s)

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