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Proceedings Paper

The Surface Electronic Structure Of Gaas(100) And GaAs(111) From Angle Resolved Photoemission
Author(s): R D Bringans; R Z Bachrach
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Paper Abstract

Angle resolved photoemission spectra have been measured for the polar (III) and (100) surfaces of GaAs. Strong differences exist in both cases between Ga-rich and As-rich surfaces in the energy region near the valence band maximum. Comparison of the spectra for the As-rich GaAs(111) (2x2) surface with a calculation of the location expected for bulk-derived features shows that the bulk bands appear to be folded back into the (2x2) surface Brillouin zone. No such effect is seen for the GaAs(100) c(4x4) surface.

Paper Details

Date Published: 27 March 1984
PDF: 3 pages
Proc. SPIE 0447, Science with Soft X-Rays, (27 March 1984); doi: 10.1117/12.939180
Show Author Affiliations
R D Bringans, Stanford University (United States)
R Z Bachrach, Xerox Palo Alto Research Center (United States)


Published in SPIE Proceedings Vol. 0447:
Science with Soft X-Rays

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