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Proceedings Paper

Silicon Based Schottky Barrier Infrared Sensors For Power System And Industrial Applications
Author(s): Hammam Elabd; Walter F Kosonocky
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Paper Abstract

Schottky barrier infrared charge coupled device sensors (IR-CCDs) have been developed. PtSi Schottky barrier detectors require cooling to liquid Nitrogen temperature and cover the wavelength range between 1 and 6 μm. The PtSi IR-CCDs can be used in industrial thermography with NEAT below 0.1°C. Pd Si-Schottkybarrier detectors require cooling to 145K and cover the spectral range between 1 and 3.5 μm. 11d2Si-IR-CCDs can be used in imaging high temperature scenes with NE▵T around 100°C. Several high density staring area and line imagers are available. Both interlaced and noninterlaced area imagers can be operated with variable and TV compatible frame rates as well as various field of view angles. The advantages of silicon fabrication technology in terms of cost and high density structures opens the doors for the design of special purpose thermal camera systems for a number of power aystem and industrial applications.

Paper Details

Date Published: 27 March 1984
PDF: 8 pages
Proc. SPIE 0446, Thermosense VI: Thermal Infrared Sensing for Diagnostics and Control, (27 March 1984); doi: 10.1117/12.939165
Show Author Affiliations
Hammam Elabd, RCA Laboratories (United States)
Walter F Kosonocky, RCA Laboratories (United States)


Published in SPIE Proceedings Vol. 0446:
Thermosense VI: Thermal Infrared Sensing for Diagnostics and Control
Gordon J. Burrer, Editor(s)

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