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Proceedings Paper

Thermal Model Of The Double-Heterostructure Burrus-Type Light-Emitting Diode
Author(s): Wlodzimierz Nakwaski
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Paper Abstract

The three-dimensional thermal model of the homojunction Burrus-type light-emitting diode, which was presented in the previous work, is adapted to the double-heterostructure Burrus-type light-emitting diode. The dependence of the parameters of the model on the AlAs mole fraction, x, in the passive layers is taken into account to this end. It appears that from the point of view of the lowest temperature in the center of the active region, both low and high values of x are favorable and the most unfavorable value of x seems to be about 0.25. On the other hand, from the point of view of the most homogeneous temperature distribution within the active region, x should be as small as possible.

Paper Details

Date Published: 10 November 1986
PDF: 6 pages
Proc. SPIE 0670, Optical Fibres and Their Applications IV, (10 November 1986); doi: 10.1117/12.938964
Show Author Affiliations
Wlodzimierz Nakwaski, Technical University of Lodz (Poland)

Published in SPIE Proceedings Vol. 0670:
Optical Fibres and Their Applications IV
Ryszard S. Romaniuk; Mieczyslaw Szustakowski, Editor(s)

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