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Proceedings Paper

Laser-Assisted Chemical And Morphological Modification Of Metallic Substrates
Author(s): Julian P Partridge; Peter R Strutt
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Paper Abstract

The synthesis of silicon nitride surface layers on metal substrates by laser-activated deposition of organometallic precursors has been demonstrated. Advantages of this technique include high deposition rates, constancy of composition, and avoidance of toxic or pyrophor ic reactants. The uniform morphology surface layers of up to 20μm thickness contained 2000 Å diameter particles of amorphous silicon nitride. Auger electron spectroscopy and Fourier transform infrared reflection spectroscopy revealed there to be oxygen contamination at the surface. Attainment of a uniform morphology required a specific set of processing conditions. The presence of residual Si-CH3 bonds within the layers was shown to be reduced by subsequent laser heating. Suggestions are made for obtaining Si3N4 layers of improved purity, also for extending this approach by using a variety of organometallic precursors to obtain SiC and Si02 layers.

Paper Details

Date Published: 25 November 1986
PDF: 11 pages
Proc. SPIE 0669, Laser Applications in Chemistry, (25 November 1986); doi: 10.1117/12.938951
Show Author Affiliations
Julian P Partridge, The University of Connecticut (United States)
Peter R Strutt, The University of Connecticut (United States)


Published in SPIE Proceedings Vol. 0669:
Laser Applications in Chemistry
D. K. Evans, Editor(s)

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