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Proceedings Paper

Epitaxial Growth Of Thin Semiconductor Films By Pulsed Laser Evaporation: Damage And Vaporization Of Cdte, Cd And Insb Targets Induced With Nd:Yag Laser.
Author(s): Jan J Dubowski
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Paper Abstract

The surface morphology of CdTe, Cd and InSb targets following vacuum pulsed laser evaporation has been examined. Vaporization of CdTe does not change the stoichiometric conditions of the surface, but precipitation of In is observed in the case of InSb. A stable vaporization rate can be obtained with a scanning laser beam after an initial layer of material is removed from the target and a characteristic surface structure is formed.

Paper Details

Date Published: 12 November 1986
PDF: 5 pages
Proc. SPIE 0668, Laser Processing: Fundamentals, Applications, and Systems Engineering, (12 November 1986); doi: 10.1117/12.938889
Show Author Affiliations
Jan J Dubowski, National Research Council of Canada (Canada)

Published in SPIE Proceedings Vol. 0668:
Laser Processing: Fundamentals, Applications, and Systems Engineering
Walter W. Duley; Robert W. Weeks, Editor(s)

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