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Proceedings Paper

Submillimeter Wave Applications Of Submicron Schottky Diodes
Author(s): Alain J. M Kreisler
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Paper Abstract

The interest given to GaAs Schottky diodes having small junction sizes has been continuously growing during the last decade to realize fast devices for detection, mixing, harmonic generation or sideband conversion in the terahertz domain. The studies carried out at LDIR on those devices cover both experimental and theoretical aspects. The following topics are considered here: Videodetection up to 10 THz with diodes having circular or non-circular geometries, tunable sideband generation from a laser source by using the power back radiated by a wire antenna connected to the diode, and detectormixer block development to improve the electromagnetic coupling efficiency between the submillimeter wave radiation and the antenna.

Paper Details

Date Published: 26 September 1986
PDF: 13 pages
Proc. SPIE 0666, Far-Infrared Science and Technology, (26 September 1986); doi: 10.1117/12.938820
Show Author Affiliations
Alain J. M Kreisler, Universite Pierre et Marie Curie (France)


Published in SPIE Proceedings Vol. 0666:
Far-Infrared Science and Technology
Jerald A. R. Izatt, Editor(s)

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