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Proceedings Paper

Pb1-xEuxSe For IR Device Applications
Author(s): P Norton; K H Bachem; M Tacke
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Paper Abstract

Pb1-xEuxSe is a promising material for IR devices. The band gap becomes larger with the relative content of Europium. The preparation of Pb1-xEuxSe by molecular beam epitaxy and the properties of these layers will be described.

Paper Details

Date Published: 22 November 1986
PDF: 3 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938560
Show Author Affiliations
P Norton, Fraunhofer-Institut fuer Physikalische Messtechnik (Germany)
K H Bachem, Fraunhofer-Institut fuer Physikalische Messtechnik (Germany)
M Tacke, Fraunhofer-Institut fuer Physikalische Messtechnik (Germany)

Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)

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