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Proceedings Paper

Extrinsic Germanium Photoconductor Material: Crystal Growth and Characterization
Author(s): Nancy M Haegel; Eugene E Haller
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Paper Abstract

Ge:Ga and Ge:Be extrinsic photoconductors are used in the 50 - 200 and 30 - 50 μm wave-length range respectively as optimized detectors for far-infrared astronomy applications. Reproducible materials synthesis and comprehensive materials characterization are required for the development of focal plane detectors which reach the high sensitivity which is theoretically possible under the very low background flux conditions of space-based observation. Ge:Ga, Ge:Be, and Ge:Zn photoconductor materials have been grown using the Czochralski technique under high purity conditions. Residual impurities can be controlled to levels of~1010 cm -3, leading to greater control of free carrier lifetime and mobility, and more reproducible detector performance. Characterization of the material with variable temperature Hall effect and infrared spectroscopy shows that Be and Zn doped crystals grown under a H2 atmosphere can contain hydrogen related complexes which affect detector performance by decreasing the resistivity of the material at low temperatures. The growth of Ge:Be presents a special case in which the oxygen content of the melt environment is a critical factor in determining reproducibility of Be doping and device performance.

Paper Details

Date Published: 22 November 1986
PDF: 7 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938559
Show Author Affiliations
Nancy M Haegel, University of California (United States)
Eugene E Haller, University of California (United States)

Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)

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