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Proceedings Paper

Epitaxial Growth Of CVD CdZnTe As Substrate For HgCdTe Detectors
Author(s): Jitendra S Goela; Raymond L Taylor
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Paper Abstract

Preliminary experimental results of epitaxial growth of CdZnTe on sapphire, silicon and single crystal CdZnTe via a low pressure chemical vapor deposition process are reported. The CdZnTe layers grown were smooth and specular in appearance. The infrared transmission trace of CdZnTe grown on silicon and sapphire showed good transmission through the film. The X-ray diffraction scan of CdZnTe on silicon showed that the film is epitaxial with a lattice constant of 6.45 Å.

Paper Details

Date Published: 22 November 1986
PDF: 5 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938554
Show Author Affiliations
Jitendra S Goela, CVD Incorporated (United States)
Raymond L Taylor, CVD Incorporated (United States)


Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)

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