Proceedings Paper
MBE Growth Of CdTe And ZnCdTe On GaAs Substrates| Format | Member Price | Non-Member Price |
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Paper Abstract
CdTe and ZnCdTe layers have been grown on (001) GaAs substrates between 150-350°C for growth rates of 0.5-2 μm/h. For CdTe, (001) and (111) orientations were observed, whereas only the (001) orientation was obtained for ZnCdTe layers. The layers, structural and optical properties were determined from SEM, double-crystal rocking-curve and photoluminescence studies.
Paper Details
Date Published: 22 November 1986
PDF: 8 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938553
Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)
PDF: 8 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938553
Show Author Affiliations
C J Summers, Georgia Tech Research Institute (United States)
A Torabi, Georgia Tech Research Institute (United States)
B K Wagner, Georgia Tech Research Institute (United States)
A Torabi, Georgia Tech Research Institute (United States)
B K Wagner, Georgia Tech Research Institute (United States)
J D Benson, Georgia Tech Research Institute (United States)
S R Stock, Georgia Institute of Technology (United States)
P C Huang, Georgia Institute of Technology (United States)
S R Stock, Georgia Institute of Technology (United States)
P C Huang, Georgia Institute of Technology (United States)
Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)
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