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Proceedings Paper

Growth of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te-epitaxial Layers By A Multi-Slice LPE Apparatus
Author(s): C Geibel; H Maier; J Ziegler
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Paper Abstract

Hgl-xCdxTe-layers have been grown on CdTe- and Cdi_yZnyTe-substrates by liquid-phase-epitaxy from a Te-rich solution in a vertical dipping system. This technique allows a series of layers to be grown simultaneously. Throughput and quality of the layers obtained are well suited for production of photovoltaic IR-detectors and renders this technique a promising alternative to bulk growth.

Paper Details

Date Published: 22 November 1986
PDF: 5 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938546
Show Author Affiliations
C Geibel, TELEFUNKEN electronic (Germany)
H Maier, TELEFUNKEN electronic (Germany)
J Ziegler, TELEFUNKEN electronic (Germany)


Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)

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