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Proceedings Paper

Damage and rapid thermal annealing of In implanted Hg[sub]0.3[/sub][sup]Cd[/sup]0.7[sup]Te[/sup]
Author(s): C Uzan; R Kalish; V Richter; T Nguyen Duy
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Paper Abstract

Rutherford backscattering analysis was used to study the damage due to In implantation into Hgl_xCdxTe (x = 0.7). We show that the defects can be removed successfuly by rapid thermal annealing (T = 440°C, t = 10s).

Paper Details

Date Published: 22 November 1986
PDF: 4 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938542
Show Author Affiliations
C Uzan, Israel Institute of Technology (Israel)
R Kalish, Israel Institute of Technology (Israel)
V Richter, Israel Institute of Technology (Israel)
T Nguyen Duy, Societe Anonyme des Telecommunications (France)

Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)

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