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Proceedings Paper

Electrical Characterisation Of Epitaxial Mercury Cadmium Telluride (CMT)
Author(s): V Vincent; C Wilson; J M Lansdowne
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Paper Abstract

Hall and resistivity data are presented for epitaxial mercury cadmium telluride layers grown by the MOVPE IMP technique. The effect of variation of substrate material and its orientation upon the Hall characteristics of the layers is discussed and a correlation between substrate orientation and anomalous p-character is reported. This correlation is explained in terms of a skin effect, which may be present as a surface or an interfacial layer. The effect of such a skin when annealing material from p-type to n-type has been investigated. The conditions favouring the observation of skin effect have been considered. The Hall parameters presented for CMT grown on sapphire indicate layers with low carrier concentration (n ~ 2 x 1014 cm-3) can be grown by this MOVPE process. Parameters on both n and p type material are reported.

Paper Details

Date Published: 22 November 1986
PDF: 10 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938538
Show Author Affiliations
V Vincent, GEC Research Limited (England)
C Wilson, GEC Research Limited (England)
J M Lansdowne, GEC Research Limited (England)

Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)

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