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Proceedings Paper

Characterization of p-type Hg1_xCdxTe by infrared reflectance
Author(s): J Baars; V Hurm; T Jakobus; H. Seelewind; J Ziegler
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Paper Abstract

An optical reflectance method is utilized to determine the effective acceptor concentra-tion of p-type Hgl_xCdxTe (o.2≤ x≤ 0.3). This method is based on the analysis of the spectral reflectance in the plasmon-phonon region of the samples at room temperature, and is capable of determining acceptor densities as low as 5.1015 cm-3. Experimental results of p-type bulk crystals and of p-type layers on n-type bulk crystals are presented, and the prac-tical limits of the method are discussed.

Paper Details

Date Published: 22 November 1986
PDF: 6 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938536
Show Author Affiliations
J Baars, Fraunhofer Institut fur Angewandte Festkorperphysik (Germany)
V Hurm, Fraunhofer Institut fur Angewandte Festkorperphysik (Germany)
T Jakobus, Fraunhofer Institut fur Angewandte Festkorperphysik (Germany)
H. Seelewind, Fraunhofer Institut fur Angewandte Festkorperphysik (Germany)
J Ziegler, TELEFUNKEN electronic (Germany)


Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)

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