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Proceedings Paper

II-VI Semiconductor Superlattices : New Infrared Materials
Author(s): J M Berroir; Y Guldner
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Paper Abstract

IC-VI superlattices, recently grown by molecular beam epitaxy, exhibit far more diverse characteristics than the conventional GaAs-AlxGa1_xAs heterostructures, in particular because of the zero-gap band strcuture of some binary and ternary mercury compounds. The superlattices band Structure can be calculated as a function of the layers thicknesses and the temperature, and the calculations are confirmed by optical and magneto--optical experiments in the case of HgTe-CdTe saperlattices. Finally, these new systems present interesting potential applications as infrared materials.

Paper Details

Date Published: 22 November 1986
PDF: 8 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938534
Show Author Affiliations
J M Berroir, L'Ecole Norraale Superieure (France)
Y Guldner, L'Ecole Norraale Superieure (France)

Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)

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