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Proceedings Paper

Alloying Effects On Hg1-xCdxTe Electronic Structure
Author(s): F Raymond
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Paper Abstract

The electronic properties of Hg1-xCdxTe (MCT) are analysed within the theoretical frame given by ETBM band structure calculation method. Properties emphasized are those of interest for device application i.e. band gap bowings and the variation of electronic properties throughout the composition range. A special attention is focused on inter-valence band optical transitions and on resonant Auger processes.

Paper Details

Date Published: 22 November 1986
PDF: 6 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938533
Show Author Affiliations
F Raymond, Laboratoire de Physique du solide et energie solaire (France)

Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)

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