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Proceedings Paper

Cadmium Mercury Telluride - A UK Perspective
Author(s): Anthony W Vere
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Paper Abstract

Melt-growth of bulk material at high temperatures leads to stress-and diffusion-induced dislocations, precipitation and non-uniform alloy composition. These defects can be reduced by epitaxial growth at lower temperatures, but epitaxial processes are prone to surface and substrate-layer interface defects and the propagation of line defects from the substrate. Results from the UK R&D programme are used to illustrate the ways in which many of these problems are being solved.

Paper Details

Date Published: 22 November 1986
PDF: 8 pages
Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938532
Show Author Affiliations
Anthony W Vere, Royal Signals and Radar Establishment (United Kingdom)


Published in SPIE Proceedings Vol. 0659:
Materials Technologies for Infrared Detectors
Jean Besson, Editor(s)

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