Proceedings Paper
Low Temperature Photo-CVD Silicon Nitride Characterization| Format | Member Price | Non-Member Price |
|---|---|---|
| $14.40 | $18.00 |
|
GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. | Check Access |
Paper Abstract
Photo-CVD Silicon Nitride thin film have been deposited at low temperature for optoelectronic devices application. The main features of the thin layer deposition system are low substrate temperature (50+250°C) and absence of charged particles damage during deposition. The results obtained concern the relationship between refractive index, infrared spectra, chemical etching, step coverage, adhesion and deposition parameters.
Paper Details
Date Published: 13 October 1986
PDF: 5 pages
Proc. SPIE 0652, Thin Film Technologies II, (13 October 1986); doi: 10.1117/12.938386
Published in SPIE Proceedings Vol. 0652:
Thin Film Technologies II
J. Roland Jacobsson, Editor(s)
PDF: 5 pages
Proc. SPIE 0652, Thin Film Technologies II, (13 October 1986); doi: 10.1117/12.938386
Show Author Affiliations
M Meliga, CSELT S.p.A. (Italy)
A Stano, CSELT S.p.A. (Italy)
A Stano, CSELT S.p.A. (Italy)
S Tamagno, CSELT S.p.A. (Italy)
Published in SPIE Proceedings Vol. 0652:
Thin Film Technologies II
J. Roland Jacobsson, Editor(s)
© SPIE. Terms of Use
