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Proceedings Paper

Optical Constants of Individual Films in Multilayers
Author(s): F Demichelis; G Kaniadakis; E Mezzetti; A Tagliaferro; E Tresso; P Rava
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Paper Abstract

An accurate technique for determining the optical constants of thin absorbing films as components in an amorphous semiconductor multilayer is presented. The case of films of Indium Tin Oxide (ITO) covered with a film of hydrogenated amorphous silicon has been investigated since it is of relevance in the solar cell field. Transmittance T, reflectance R and reverse reflectance R' were measured for the single films ( a-Si:H and ITO) on the substrate (quartz) and for the bilayer a-Si:H/ITO; from these measurements the indices of refraction (n) and extinction coefficients (k) were obtained. Depending on deposition temperature, the optical constants of a single a-Si:H film are remarkably different from those of the same film when it is part of a bilayer structure, especially in the short wavelength region. Also the value of the energy gap in the bilayer case is smaller than in the monolayer case.

Paper Details

Date Published: 13 October 1986
PDF: 5 pages
Proc. SPIE 0652, Thin Film Technologies II, (13 October 1986); doi: 10.1117/12.938375
Show Author Affiliations
F Demichelis, Politecnico di Torino (Italy)
G Kaniadakis, Politecnico di Torino (Italy)
E Mezzetti, Politecnico di Torino (Italy)
A Tagliaferro, Politecnico di Torino (Italy)
E Tresso, Politecnico di Torino (Italy)
P Rava, Elettrorava (Italy)

Published in SPIE Proceedings Vol. 0652:
Thin Film Technologies II
J. Roland Jacobsson, Editor(s)

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