Share Email Print
cover

Proceedings Paper

Density Of States At Mid Gap In Hydrogenated Amorphous Silicon
Author(s): E Yahya; H R Shanks
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The density of states distributions near mid gap in a series of hydrogenated amorphous silicon films have been determined from space charge limited current measurements. The measurements were made on Au/aSi:H Schottky diode structures prepared by reactive rf sputter deposition. Samples with hydrogen concentrations near 16% as determined from infrared absorption had densities of states of 3x1014 states/cm3 eV. The experimental results indicate that high quality aSi:H films with low densities of states can be obtained under certain deposition conditions and that the density of states at mid gap is hydrogen concentration dependent with a minimum near 16%. For a given hydrogen concentration, films thicker than 2 um yielded the lowest density of states consistent with a model in which diffusion currents can be neglected and where surface and interface layers have a higher defect density than the bulk of the film.

Paper Details

Date Published: 24 September 1986
PDF: 6 pages
Proc. SPIE 0653, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion V, (24 September 1986); doi: 10.1117/12.938348
Show Author Affiliations
E Yahya, Iowa State University (United States)
H R Shanks, Iowa State University (United States)


Published in SPIE Proceedings Vol. 0653:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion V
Claes-Goeran Granqvist; Carl M. Lampert; John J. Mason; Volker Wittwer, Editor(s)

© SPIE. Terms of Use
Back to Top