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Proceedings Paper

New IR Optical Waveguides
Author(s): A. Azema; J. Botineau; Th. Brossat
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Paper Abstract

In recent years Hg1-xCdxTe with high concentrations of mercury has commonly been used in infrared detectors. In this paper it is shown that the same type of material, but with low concentration of mercury, can be used to form low-loss waveguides at 10.6 μm. After discussing what properties semiconductors in general must exhibit to yield infrared waveguides at 10.6 μm, we describe the use of high band gap HgCdTe structures manufactured by isothermal evaporation diffusion process (E.D.R.I.). These waveguides are formed on cadmium telluride substrates and characterized by classical guided optics methods. They exhibit very low attenuation (< 0.5 dB/cm) and they can carry high power densities.

Paper Details

Date Published: 3 November 1986
PDF: 6 pages
Proc. SPIE 0651, Integrated Optical Circuit Engineering III, (3 November 1986); doi: 10.1117/12.938164
Show Author Affiliations
A. Azema, Laboratoire de physique de la matiere condensee (France)
J. Botineau, Laboratoire de physique de la matiere condensee (France)
Th. Brossat, Societe Anonyme des Telecommunications (France)


Published in SPIE Proceedings Vol. 0651:
Integrated Optical Circuit Engineering III
Ralf Th. Kersten, Editor(s)

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