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Proceedings Paper

High-Speed Optical TIR Switches with PLZT Thin Films
Author(s): T. Kawaguchi; H. Higashino; K. Setsune; O. Yamazaki; K. Wasa
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Paper Abstract

A new structure using strip-loaded waveguides is proposed for TIR switches with PLZT thin films. The TIR switches realized high-speed intensity modulation of LD light (0.83 μm) at 2 GHz. The modulation bandwidth of the lumped-constant electrodes and the traveling-wave electrodes was 7.1 GHz and more than 26.5 GHz, respectively. The modulation bandwidth is estimated to be more than 100 GHz.

Paper Details

Date Published: 3 November 1986
PDF: 4 pages
Proc. SPIE 0651, Integrated Optical Circuit Engineering III, (3 November 1986); doi: 10.1117/12.938137
Show Author Affiliations
T. Kawaguchi, Matsushita Electric Industrial Co. Ltd. (Japan)
H. Higashino, Matsushita Electric Industrial Co. Ltd. (Japan)
K. Setsune, Matsushita Electric Industrial Co. Ltd. (Japan)
O. Yamazaki, Matsushita Electric Industrial Co. Ltd. (Japan)
K. Wasa, Matsushita Electric Industrial Co. Ltd. (Japan)


Published in SPIE Proceedings Vol. 0651:
Integrated Optical Circuit Engineering III
Ralf Th. Kersten, Editor(s)

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