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Proceedings Paper

III-V Semiconductor Waveguides And Phase-Modulators : The Localized Vapor Phase Epitaxy Approach
Author(s): M. Erman; N. Vodjdani; P. Jarry; P. Stephan; J. L. Gentner; C. Guedon
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Paper Abstract

The vapor phase epitaxy has been used to realize a number of new GaAs and InP waveguide structures. Among them, the inverted rib structure has been used in order to fabricate GaAs homojunction phase modulators. The structures have been analyzed with two-dimensional numerical methods, allowing for an accurate modelling and optimization of the device. The potentialities of similar heterojunction phase modulators for both the GaAs and InP systems are discussed.

Paper Details

Date Published: 3 November 1986
PDF: 8 pages
Proc. SPIE 0651, Integrated Optical Circuit Engineering III, (3 November 1986); doi: 10.1117/12.938132
Show Author Affiliations
M. Erman, Laboratoires d'Electronique et de Physique Appliquee (France)
N. Vodjdani, Laboratoires d'Electronique et de Physique Appliquee (France)
P. Jarry, Laboratoires d'Electronique et de Physique Appliquee (France)
P. Stephan, Laboratoires d'Electronique et de Physique Appliquee (France)
J. L. Gentner, Laboratoires d'Electronique et de Physique Appliquee (France)
C. Guedon, Laboratoires d'Electronique et de Physique Appliquee (France)


Published in SPIE Proceedings Vol. 0651:
Integrated Optical Circuit Engineering III
Ralf Th. Kersten, Editor(s)

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