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Proceedings Paper

Parasitic Oscillations And Amplified Spontaneous Emission In Face-Pumped Total Internal Reflection Lasers
Author(s): D. C. Brown; D. P. Benfey; W. J. Gehm; D. H. Holmes; K. K. Lee
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Paper Abstract

Parasitic oscillations and amplified spontaneous emission (ASE) can often strongly influence the operation and efficiency of laser devices, as has been shown previously for disk and active-mirror amplifiers. Here we report the first comprehensive investigation of those phenomena in total internal reflection (TIR) face-pumped lasers. The results to be presented here were made possible by the development of two three-dimensional computer codes. The first (PARA) systematically searches for parasitic oscillations in slab lasers and determines the gain required to reach threshold. Our second code (AMSPE) is a three dimensional raytrace model which includes temporal gain and allows for non-uniform gain profiles. AMSPE calculates the gain depletion as well as changes in spatial gain profile and thus the decrease in amplifier efficiency as a function of a number of critical parameters such as slab aspect ratio, spontaneous emission spectral profile, and slab face angle. In this paper we first review the classes of parasitics in slab lasers and show how symmetry breaking can significantly increase the energy storage capability of such deyices. We then review the construction of the AMSPE code and show how it may be used to identify maximum efficiency slab laser configurations.

Paper Details

Date Published: 6 April 1987
PDF: 10 pages
Proc. SPIE 0736, New Slab and Solid-State Laser Technologies and Applications, (6 April 1987); doi: 10.1117/12.938069
Show Author Affiliations
D. C. Brown, General Electric Company (United States)
D. P. Benfey, General Electric Company (United States)
W. J. Gehm, General Electric Company (United States)
D. H. Holmes, General Electric Company (United States)
K. K. Lee, General Electric Company (United States)

Published in SPIE Proceedings Vol. 0736:
New Slab and Solid-State Laser Technologies and Applications
John M. Eggleston; Steven Guch, Editor(s)

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