Proceedings Paper
HnCdTe Charge Transfer Device Focal Planes| Format | Member Price | Non-Member Price |
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Paper Abstract
Metal-Insulator-Semiconductor (MIS) detectors fabricated in HgCdTe offer significant advantages for focal plane applications. These detectors perform noise free signal intearation directly in the HoCdTe, can be formed in either n- or p-type material, do not require formation of a metallurgical junction, and are easy to interface to low power signal processing integrated circuits in silicon. Furthermore, this device technology readily facilitates the formation of charge transfer devices which perform some signal processing in the HaCdTe prior to transfer of the signal to the silicon processor.
Paper Details
Date Published: 9 December 1983
PDF: 13 pages
Proc. SPIE 0443, Infrared Detectors, (9 December 1983); doi: 10.1117/12.937944
Published in SPIE Proceedings Vol. 0443:
Infrared Detectors
William L. Wolfe, Editor(s)
PDF: 13 pages
Proc. SPIE 0443, Infrared Detectors, (9 December 1983); doi: 10.1117/12.937944
Show Author Affiliations
C. Grady Roberts, Texas Instruments Incorporated (United States)
Published in SPIE Proceedings Vol. 0443:
Infrared Detectors
William L. Wolfe, Editor(s)
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