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Proceedings Paper

Single Mode Metal-Insulator-Semiconductor Heterostructure Lasers
Author(s): F. C. Jain; K. Kazi
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Paper Abstract

Metal-Insulator-Semiconductor (MIS) injection lasers having various structural configurations are discussed for single mode operation in the wavelength range of 0.72-1.55 microns. MIS interfaces are used as an alternative to p-n heterojunctions to obtain effective minority carrier injection and subsequent lasing action in the active layer. Emitted photons are confined in the active layer as they are reflected by a heterostructure dielectric discontinuity on one side and perfectly reflecting surface of the barrier metal on the other side. Modal analysis of a stripe geometry MIS laser involving both lateral and transverse modes is presented. A comparison of the output characteristics, highlighting the differences in transverse modal behavior of MIS laser structures with a conventional p-n double heterostructure (DH) lasers, operating at the same wavelength, is reported. A novel distributed feedback (DFB) laser employing an MIS heterostructure, rather than a p-n heterojunction, is also proposed. The simplicity of fabrication of the proposed DFB laser lends itself to monolithic integration with optical waveguides and other electronic and optoelectronic devices.

Paper Details

Date Published: 14 January 1987
PDF: 7 pages
Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); doi: 10.1117/12.937705
Show Author Affiliations
F. C. Jain, The University of Connecticut (United States)
K. Kazi, The University of Connecticut (United States)


Published in SPIE Proceedings Vol. 0723:
Progress in Semiconductor Laser Diodes
Elliot G. Eichen, Editor(s)

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