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Proceedings Paper

On-Wafer Testing of GainAsP/InP Mass-Transported Lasers
Author(s): J. N. Walpole; Z. L. Liau
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Paper Abstract

We review techniques which have been developed for on-wafer testing of diode lasers. We have previously described the fabrication of mass-transported buried-heterostructure lasers in which the laser cavity is produced within a mesa structure in such a way that electrical isolation between laser mesas on the wafer is essentially built-in. Bars of lasers in linear edge-emitting arrays can be cleaved from such a wafer. We have carried out cw electrical and optical characterization of each laser (up to about 50 devices in a row) in these bars without bonding to heat-sinks. Similarly we have evaluated individual elements of two-dimensional arrays of surface-emitting lasers which are fabricated using etched and mass-transported cavity mirrors with monolithically integrated beam deflectors. This kind of on-wafer testing permits selection of suitable individual devices to be diced and bonded or selection of segments of wafers for optimum array performance. It also makes possible the correlation of device performance with position on the wafer which is useful in diagnosing problems in wafer growth and fabrication.

Paper Details

Date Published: 14 January 1987
PDF: 3 pages
Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); doi: 10.1117/12.937700
Show Author Affiliations
J. N. Walpole, Massachusetts Institute of Technology (United States)
Z. L. Liau, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0723:
Progress in Semiconductor Laser Diodes
Elliot G. Eichen, Editor(s)

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