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Proceedings Paper

Influence Of Parasitic Elements On Laser Diode Characterization By Electrical Noise Measurements
Author(s): P. A. Andrekson; P. Andersson
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Paper Abstract

The influence of parasitic elements on the wideband electrical noise in semiconductor lasers is investigated theoretically and experimentally. The results show that the maximum small-signal modulation bandwidth can be determined from measurements of the electrical noise spectrum. A small difference of the peak frequency in the optical intensity noise and the peak frequency in the electrical noise spectra is observed (about 200 MHz), and is explained by introducing the nonlinear intrinsic diode impedance in the parasitic model.

Paper Details

Date Published: 14 January 1987
PDF: 5 pages
Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); doi: 10.1117/12.937687
Show Author Affiliations
P. A. Andrekson, Chalmers University of Technology (Sweden)
P. Andersson, Chalmers University of Technology (Sweden)

Published in SPIE Proceedings Vol. 0723:
Progress in Semiconductor Laser Diodes
Elliot G. Eichen, Editor(s)

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