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Proceedings Paper

Small-Signal Modulation Of P-Substrate Mass-Transported Gainasp/Inp Lasers
Author(s): D. Z. Tsang; Z. L. Liau
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Paper Abstract

The modulation characteristics of GaInAsP diode lasers grown on p-type substrates have been studied on devices in which the parasitic bonding pads have been eliminated. The lasers have thresholds as low as 4.5 mA. The small-signal sinusoidal response is comparable to similar lasers made on n-type substrates. A small-signal -3 dB frequency as high as 16.4 GHz has been measured with a 175-μm-long laser.

Paper Details

Date Published: 14 January 1987
PDF: 5 pages
Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); doi: 10.1117/12.937682
Show Author Affiliations
D. Z. Tsang, Massachusetts Institute of Technology (United States)
Z. L. Liau, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0723:
Progress in Semiconductor Laser Diodes
Elliot G. Eichen, Editor(s)

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