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Proceedings Paper

The Ultimate Bandwidth Of Semiconductor Lasers
Author(s): John E. Bowers
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Paper Abstract

The fundamentals of high frequency semiconductor laser modulation will be reviewed with emphasis on the inherent limits to very high frequency modulation. The tradeoffs between high speed operation and high power operation will be presented along with suggestions to increase the laser bandwidth. Recent world wide progress will be described, including the experimental room temperature demonstrations of 25 GHz pulsed bandwidth and 18 GHz cw bandwidth. Theoretical calculations and experimental results for large signal modulation will be presented showing the relation between large and small signal modulation formats.

Paper Details

Date Published: 14 January 1987
PDF: 8 pages
Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); doi: 10.1117/12.937681
Show Author Affiliations
John E. Bowers, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0723:
Progress in Semiconductor Laser Diodes
Elliot G. Eichen, Editor(s)

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