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Proceedings Paper

InGaAsP High Power Laser Array
Author(s): N. K. Dutta; T. M. Shen; S. G. Napholtz; T. Cella
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Paper Abstract

Fabrication and performance characteristics of both gain-guided and index-guided laser arrays emitting near 1.3μm are reported. The ten emitter laser arrays have threshold currents in the 300-500 mA range and have been operated to output powers of 600 mW near room temperature. The power output characteristics of these lasers are compared to that of a single emitter device where pulsed output powers of 200 mW have been obtained using a good current confining structure. The phase locked laser arrays exhibit rise and fall times of 1 ns under high current injection and can be modulated at 500 Mb/s.

Paper Details

Date Published: 14 January 1987
PDF: 4 pages
Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); doi: 10.1117/12.937678
Show Author Affiliations
N. K. Dutta, AT&T Bell Laboratories (United States)
T. M. Shen, AT&T Bell Laboratories (United States)
S. G. Napholtz, AT&T Bell Laboratories (United States)
T. Cella, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0723:
Progress in Semiconductor Laser Diodes
Elliot G. Eichen, Editor(s)

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