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Proceedings Paper

High Power Semiconductor Lasers
Author(s): L. Figueroa; C. Morrison; L . Zinkiewicz
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Paper Abstract

In this paper we will provide a summary of the principles which govern the operation of major types of high power(CW) GaAlAs/GaAs and GaInAsP/InP single mode lasers which are either commercially available or have demonstrated exceptional laboratory results. In addition, a summary of the operation of novel structures such as phase-locked arrays will also be presented.

Paper Details

Date Published: 14 January 1987
PDF: 23 pages
Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); doi: 10.1117/12.937677
Show Author Affiliations
L. Figueroa, University of Florida (United States)
C. Morrison, TRW Electro-Optics Research Center (United States)
L . Zinkiewicz, TRW Electro-Optics Research Center (United States)

Published in SPIE Proceedings Vol. 0723:
Progress in Semiconductor Laser Diodes
Elliot G. Eichen, Editor(s)

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