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Proceedings Paper

InGaAsP Semiconductor Lasers and LEDs in the 1.2 to 1.6 µm Spectral Region for High-Speed Optical Communications
Author(s): R. J. Fu; D. J. Bull; C. J. Hwang; C. S. Wang
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Paper Abstract

The fabrication and performance characteristics of InGaAsP semiconductor diode lasers and LEDs are described. Measured L-I, spectra, far-field angle, small-signal modulation bandwidth, as well as the optical power coupled into multimode and single-mode fibers are presented. Their applications in high-speed optical communications are discussed.

Paper Details

Date Published: 14 January 1987
PDF: 6 pages
Proc. SPIE 0722, Components for Fiber Optic Applications, (14 January 1987); doi: 10.1117/12.937676
Show Author Affiliations
R. J. Fu, General Optronics Corporation (United States)
D. J. Bull, General Optronics Corporation (United States)
C. J. Hwang, General Optronics Corporation (United States)
C. S. Wang, General Optronics Corporation (United States)

Published in SPIE Proceedings Vol. 0722:
Components for Fiber Optic Applications
Vincent J. Tekippe, Editor(s)

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