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Proceedings Paper

High-Speed Photoconductive Detectors Fabricated In Heteroepitaxial GaAs Layers
Author(s): G. W. Turner; V. Diadiuk; H. Q. Le; H. K. Choi; G. M. Metze; B-Y. Tsaur
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Paper Abstract

Response times of ~60 and 25 ps (FWHM), respectively, have been measured for photoconductive detectors fabricated in GaAs layers grown by molecular beam epitaxy on silicon substrates and silicon-on-sapphire substrates. Photoconductive detectors, which can be readily combined with GaAs logic devices such as MESFETs to provide high-speed optical to electrical conversion, could be used in optical interconnects that are integrated with Si circuits on monolithic GaAs/Si wafers. Transconductance values of 120 mS/mm have been obtained for MESFET's fabricated in GaAs layers grown on silicon-on-sapphire substrates.

Paper Details

Date Published: 14 January 1987
PDF: 5 pages
Proc. SPIE 0722, Components for Fiber Optic Applications, (14 January 1987); doi: 10.1117/12.937667
Show Author Affiliations
G. W. Turner, Massachusetts Institute of Technology (United States)
V. Diadiuk, Massachusetts Institute of Technology (United States)
H. Q. Le, Massachusetts Institute of Technology (United States)
H. K. Choi, Massachusetts Institute of Technology (United States)
G. M. Metze, Massachusetts Institute of Technology (United States)
B-Y. Tsaur, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0722:
Components for Fiber Optic Applications
Vincent J. Tekippe, Editor(s)

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