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Proceedings Paper

GaInAsSb Detectors And Lasers For Mid-Infrared Optical Communications
Author(s): J. L. Zyskind; C. A. Burrus; C. Caneau; A. G. Dentai; M. A. Pollack; A. K. Srivastava; J. E. Bowers; J. C. DeWinter
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Paper Abstract

Room-temperature Ga0.82 InO.18As0.17Sb0.83/GaSb photodiodes have been fabricated for use at wavelengths to 2.3μpm. Back-illuminated heterojunction p-n photodiodes show high external quantum efficiency (65%) for wavelengths between 1.8 and 2.3 μm. Front-illuminated pin homojunction photodiodes have an impulse response of 110 ps and respond to pseudorandom modulation at rates as high as 4 Gbit/s. Double heterostructure Ga0.841n0.16As0.15Sb0.85/A10.34Ga0.66As0.04Sb0.96 lasers have pulsed threshold current densities as low as 3.5 kA/cm2 at room temperature and operate cw at temperatures of up to 235K.

Paper Details

Date Published: 14 January 1987
PDF: 6 pages
Proc. SPIE 0722, Components for Fiber Optic Applications, (14 January 1987); doi: 10.1117/12.937666
Show Author Affiliations
J. L. Zyskind, AT&T Bell Laboratories (United States)
C. A. Burrus, AT&T Bell Laboratories (United States)
C. Caneau, AT&T Bell Laboratories (United States)
A. G. Dentai, AT&T Bell Laboratories (United States)
M. A. Pollack, AT&T Bell Laboratories (United States)
A. K. Srivastava, AT&T Bell Laboratories (United States)
J. E. Bowers, AT&T Bell Laboratories (United States)
J. C. DeWinter, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0722:
Components for Fiber Optic Applications
Vincent J. Tekippe, Editor(s)

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